SILICON
|
PROPERTY |
@ 300K |
UNITS |
REFERENCES |
|
Density |
2.33 |
G/cm3 |
Si1 Si2 Si3 |
|
Specific Heat |
0.169 |
Cal/g-K |
Si4 Si5 Si6 |
|
Thermal Conductivity |
0.354 |
Cal/cm-s-K |
Si7 Si8 Si9 |
|
Thermal Exp Coef |
2.618 |
1/K |
Si10 Si11 Si12 |
|
Melting Point |
1683 |
K |
Si13 |
|
Resistivity 1 |
316000 |
Ohm-cm |
Si14 Si15 Si16 |
|
TCR (218K to 398K) |
-15.068x106 |
Ppm/K |
Si14 Si15 Si16 |
|
Young’s Modulus 2 |
2.356x107 |
psi |
Si17 Si18 Si19 |
|
Poisson’s Ratio 2 |
0.222 |
----- |
Si17 Si18 Si19 |
|
Yield Strength 3 |
----- |
psi |
|
|
Ult Tensile strength 4 |
26,800 |
psi |
Si20 Si21 Si22 |
|
Elongation at Break 3 |
----- |
% |
|
|
Hardness |
1050 |
Brinell |
Si24 Si25 Si26 |
1: The resistivity is a very strong function of the doping level. For the potential variations in the resistivity and TCR see the graphs of Resistivity -v- Temperature. The values listed are intrinsic values and are calculated from the equation provided by reference Si27
2: Values listed are for Polycrystalline material. The values for single crystal material can be found in the graphs of modulus versus temperature.
3: Below about 600C, Si is a brittle solid. Fracture is preceded by no yielding or plastic deformation. The maximum breaking strength is determined by the sizes and distribution of flaws present in the material. The flaw distribution is a strong function of the volume. Smaller samples will have a narrow distribution of smaller flaws and therefore will be inherently stronger.
4: Strength varies from 9046 psi (flexural strength of polycrystalline bar) to >500,000 psi (tensile strength of small diameter whiskers).